• DocumentCode
    2007574
  • Title

    A High-Performance Sram Memory Cell with Ldd-Tft Loads

  • Author

    Tsutsumi, K. ; Inoue, Y. ; Murakami, S. ; Sakamoto, O. ; Ashida, M. ; Kohno, Y.

  • Author_Institution
    LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Japan
  • fYear
    1991
  • fDate
    28-30 May 1991
  • Firstpage
    23
  • Lastpage
    24
  • Keywords
    Electrodes; Impurities; Laboratories; Large scale integration; P-n junctions; Random access memory; Research and development; Stability; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1991.705971
  • Filename
    705971
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2007574