A 0.6 /spl mu/m CMOS pinned photodiode color imager technology

Author

Guidash, R.M. ; Lee, T.-H. ; Lee, P.P.K. ; Sackett, D.H. ; Drowley, C.I. ; Swenson, M.S. ; Arbaugh, L. ; Hollstein, R. ; Shapiro, F. ; Domer, S.

Author_Institution

Microelectron. Technol. Div., Eastman Kodak Co., Rochester, NY, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

927

Lastpage

929

Abstract

The world´s first submicron pinned photodiode CMOS image sensors have been produced by adding an optimized image sensor module to a 3.3 V, 0.6 /spl mu/m CMOS process. The 4-transistor pixel cells achieve excellent blue response, low dark current, and good dynamic range. A full-color imager with good color reproduction has been produced using this technology.

Keywords

CMOS analogue integrated circuits; MOS memory circuits; dark conductivity5802362; economics; image sensors; integrated circuit manufacture; integrated circuit technology; photodiodes; quantum interference devices; single electron transistors; 0.6 micron; 3.3 V; CMOS image sensors; CMOS pinned photodiode; blue response; color imager technology; color reproduction; dark current; dynamic range; four-transistor pixel cells; CMOS image sensors; CMOS process; CMOS technology; Cameras; Circuits; Color; Dark current; Photodiodes; Pixel; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650533

Filename

650533