DocumentCode
2007792
Title
A MEMS variable Faraday cage as tuning element for integrated silicon micromachined cavity resonators
Author
Dancila, D. ; Ekkels, P. ; Rottenberg, X. ; Huynen, I. ; De Raedt, W. ; Tilmans, H.A.C.
Author_Institution
IMEC, Leuven, Belgium
fYear
2010
fDate
24-28 Jan. 2010
Firstpage
723
Lastpage
726
Abstract
This paper reports the design and the realization of a variable-sized MEMS-based Faraday cage, used to tune the resonant frequency of a silicon micromachined cavity resonator. The Faraday cage is defined by a 2D-array of electrostatically controllable metal cantilevers. The cantilever array effectively shields an enclosed (air) volume (forming the Faraday cage) located inside the micromachined cavity resonator. The Faraday cage perturbs the electromagnetic field distribution inside the cavity resonator and provides a means to electrically tune the resonant frequency of the resonator. In this realization, the cavity resonator was micromachined using bulk KOH etching in silicon and assembled in a low temperature die-to-wafer soldering process. The electrical feeding was realized in thin-film metallizations and the resonator is formed as a two-chip assembly. We measured a maximal frequency tuning of 1.2 GHz at 60 GHz with a tuning voltage of 16 VDC.
Keywords
cantilevers; cavity resonators; etching; micromachining; micromechanical resonators; soldering; MEMS variable Faraday cage; bulk KOH etching; cantilever array; electrical feeding; electromagnetic field distribution; electrostatically controllable metal cantilevers; integrated silicon micromachined cavity resonators; low temperature die-to-wafer soldering; resonant frequency; thin-film metallization; tuning element; two-chip assembly; variable-sized MEMS-based Faraday cage; Assembly; Cavity resonators; Electric variables control; Electromagnetic fields; Etching; Micromechanical devices; Resonant frequency; Silicon; Temperature; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location
Wanchai, Hong Kong
ISSN
1084-6999
Print_ISBN
978-1-4244-5761-8
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2010.5442306
Filename
5442306
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