Title :
Reliability issues in advanced High k/metal gate stacks for 45 nm CMOS applications
Author :
Groeseneken, G. ; Aoulaiche, M. ; De Gendt, S. ; Degraeve, R. ; Houssa, M. ; Kauerauf, T. ; Pantisano, L.
Author_Institution :
IMEC, Leuven
Abstract :
Some recent insights in reliability issues of high k/metal gate stacks for the 45 nm CMOS node and beyond are discussed. The problem of transient charging effects leading to threshold voltage instability is illustrated. It is shown that nitridation of Hf-silicate layers leads to severe degradation of the negative-bias-instability (NBTI) lifetime. Some insights in the mechanisms of time-dependent-dielectric breakdown (TDDB) are discussed and illustrated
Keywords :
CMOS integrated circuits; electric breakdown; hafnium compounds; high-k dielectric thin films; nitridation; semiconductor device reliability; stability; 45 nm; CMOS applications; Hf-silicate layers; high k material; metal gate stacks; negative-bias-instability lifetime; nitridation; reliability issues; threshold voltage instability; time-dependent-dielectric breakdown; transient charging effects; Chemical technology; Degradation; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Leakage current; Measurement techniques; Niobium compounds; Threshold voltage; Titanium compounds;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331143
