Reliability issues in advanced High k/metal gate stacks for 45 nm CMOS applications

Author

Groeseneken, G. ; Aoulaiche, M. ; De Gendt, S. ; Degraeve, R. ; Houssa, M. ; Kauerauf, T. ; Pantisano, L.

Author_Institution

IMEC, Leuven

fYear

2006

fDate

Oct. 2006

Firstpage

15

Lastpage

19

Abstract

Some recent insights in reliability issues of high k/metal gate stacks for the 45 nm CMOS node and beyond are discussed. The problem of transient charging effects leading to threshold voltage instability is illustrated. It is shown that nitridation of Hf-silicate layers leads to severe degradation of the negative-bias-instability (NBTI) lifetime. Some insights in the mechanisms of time-dependent-dielectric breakdown (TDDB) are discussed and illustrated

Keywords

CMOS integrated circuits; electric breakdown; hafnium compounds; high-k dielectric thin films; nitridation; semiconductor device reliability; stability; 45 nm; CMOS applications; Hf-silicate layers; high k material; metal gate stacks; negative-bias-instability lifetime; nitridation; reliability issues; threshold voltage instability; time-dependent-dielectric breakdown; transient charging effects; Chemical technology; Degradation; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Leakage current; Measurement techniques; Niobium compounds; Threshold voltage; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

1-4244-0369-0

Type

conf

DOI

10.1109/ASDAM.2006.331143

Filename

4133067