Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs

Author

Timp, G. ; Agarwal, A. ; Baumann, F.H. ; Boone, T. ; Buonanno, M. ; Cirelli, R. ; Donnelly, V. ; Foad, M. ; Grant, D. ; Green, M. ; Gossmann, H. ; Hillenius, S. ; Jackson, J. ; Jacobson, D. ; Kleiman, R. ; Komblit, A. ; Klemens, F. ; Lee, J.T.-C. ; Mansfi

Author_Institution

Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

930

Lastpage

932

Abstract

Reports measurements of the DC characteristics of sub-100 nm nMOSFETs that employ low leakage ultra-thin gate oxides only 1-2 nm thick to achieve high current drive capability and transconductance. We demonstrate that I/sub Dsat//spl ap/1.8 mA//spl mu/m can be achieved with a 60 nm gate at 1.5 V using a 1.3-1.4 nm gate oxide with a gate leakage current less than 20 nA//spl mu/m/sup 2/. Furthermore, we find that I/sub Dsat/ deteriorates for gate oxides thicker or thinner than this.

Keywords

MOSFET; characteristics measurement; leakage currents; semiconductor device reliability; 1 to 2 nm; 1.5 V; 60 nm; DC characteristics; current drive capability; gate leakage current; gate oxide; nMOSFETs; transconductance; ultra-thin gate oxides; Capacitance measurement; Current measurement; Electric variables measurement; Etching; Lattices; Length measurement; Lithography; MOSFETs; Silicon; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650534

Filename

650534