Title :
Silicon impact-ionization multiplier for optical detection
Author :
Lee, Hong-Wei ; Beutler, Joshua L. ; Hawkins, Aaron R.
Author_Institution :
Electr. & Comput. Eng. Dept., Brigham Young Univ., Provo, UT, USA
Abstract :
We demonstrate a current multiplier which can be operated with either silicon or indium-gallium-arsenide photodiodes for optical detection. Current gains above 100 along with pre-amplified leakage currents of less than 2 nA were measured.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; impact ionisation; indium compounds; photodetectors; photodiodes; semiconductor device measurement; silicon; Si; indium-gallium-arsenide photodiode; optical detection; silicon impact-ionization multiplier; silicon photodiode; Charge carrier processes; Impact ionization; Indium gallium arsenide; Indium phosphide; Optical detectors; Photoconductivity; Photodiodes; Schottky barriers; Silicon; Voltage;
Conference_Titel :
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Print_ISBN :
1-55752-803-9
DOI :
10.1109/OFC.2006.215483
