Title :
Growth mechanism and field emission properties of inject-like ZnO nanostructure
Author :
Yang, Xiaxi ; Zhang, Xiaobing ; Lei, Wei ; Wang, Baoping ; Li, Chi
Author_Institution :
Jiangsu Inf. Display Eng. Res. Center, Southeast Univ., Nanjing
Abstract :
We report the fabrication process of injector-like ZnO nanostructures and their excellent field emission properties. Injector-like Zinc oxide (ZnO) nanostructures were synthesized on a Si (001) substrate with ~5 nm thick gold film by direct thermal evaporation of Zinc power under a low temperature of 600 degC and normal pressure. Field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), Raman and photoluminescence (PL) were applied to study the structural characteristics and optical properties of the product.
Keywords :
II-VI semiconductors; Raman spectra; field emission; field emission electron microscopy; nanostructured materials; nanotechnology; photoluminescence; scanning electron microscopy; semiconductor growth; vacuum deposition; wide band gap semiconductors; zinc compounds; FESEM; Raman spectra; X-ray diffraction; ZnO; direct thermal evaporation; field emission property; growth mechanism; injector-like zinc oxide nanostructure; photoluminescence; Electron emission; Fabrication; Gold; Mechanical factors; Optical films; Optical microscopy; Semiconductor films; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Vacuum Electronics Conference, 2008. IVEC 2008. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-1715-5
DOI :
10.1109/IVELEC.2008.4556550
