Spectroscopic ellipsometric study of LPCVD-deposited Si nanocrystals in SiNx and Si3N4

Author

Basa, P. ; Petrik, P. ; Fried, M.

Author_Institution

Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest

fYear

2006

fDate

Oct. 2006

Firstpage

87

Lastpage

89

Abstract

Low-pressure chemical vapour deposited and annealed SiN_x/nc-Si/SiN_x and Si₃N₄/nc-Si/Si₃N₄ layers prepared on Si substrates were characterized by spectroscopic ellipsometry. The effective medium approximation model was used to obtain the thickness, the composition and homogeneity of the layers. It was obtained that the deposited nc-Si layer thickness depended on the stoichiometry of the underlying silicon nitride layer

Keywords

annealing; chemical vapour deposition; ellipsometry; nanostructured materials; silicon compounds; spectroscopy; thickness measurement; LPCVD; Si₃N₄-Si-Si₃N₄; SiN-Si-SiN; SiN_x-Si-SiN_x; annealling; layer composition; layer homogeneity; layer stoichiometry; layer thickness; low-pressure chemical vapour deposition; medium approximation; nanocrystals; spectroscopic ellipsometry; Chemicals; Dielectric materials; Electrons; Ellipsometry; Nanocrystals; Optical films; Rough surfaces; Silicon compounds; Spectroscopy; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

1-4244-0369-0

Type

conf

DOI

10.1109/ASDAM.2006.331160

Filename

4133084