Title :
Micro-Raman scattering: A versatile tool for characterization of semiconductor structures
Author_Institution :
Inst. of Theor. Phys., TU Bergakademie Freiberg
Abstract :
As a non-destructive and relatively rapid method, Raman spectroscopy is well established for the characterization of semiconductor substrates, heterostructures and devices. Some applications of micro-Raman spectroscopy to measurements of stress, crystallinity and charge carriers in semiconductor structures are discussed with emphasis on the scope and the limitations of the information that can be obtained with Raman spectroscopy
Keywords :
Raman spectra; Raman spectroscopy; nondestructive testing; semiconductor devices; semiconductor materials; stress measurement; Raman spectroscopy; charge carriers measurement; crystallinity measurement; micro Raman scattering; nondestructive method; relatively rapid method; semiconductor structures; stress measurement; Crystallization; Frequency; Optical scattering; Phonons; Raman scattering; Spectroscopy; Strain measurement; Stress measurement; Substrates; Tensile stress;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331172
