DocumentCode :
2008736
Title :
Electrical and Memory Properties of Non-volatile Memory Structures with Embedded Si Nanocrystals
Author :
Horváth, Zs J. ; Basa, P. ; Jászi, T. ; Pap, A.E. ; Szöllösi, P. ; Nagy, K. ; Hardy, V.
Author_Institution :
Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest
fYear :
2006
fDate :
Oct. 2006
Firstpage :
205
Lastpage :
208
Abstract :
Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and a SiO2 or a Si3N4 tunnel layer. It was obtained that the charging behaviour of structures with SiO2 tunnel layer was better than with Si3N4 tunnel layer
Keywords :
chemical vapour deposition; elemental semiconductors; nanostructured materials; random-access storage; silicon; silicon compounds; Si3N4; SiO2; electrical properties; embedded nanocrystals; low pressure chemical vapour deposition; memory properties; nonvolatile memory structures; Capacitance measurement; Capacitance-voltage characteristics; Chemical vapor deposition; Nanocrystals; Nonvolatile memory; Pressure control; Pulse measurements; Temperature; Thickness control; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
Type :
conf
DOI :
10.1109/ASDAM.2006.331190
Filename :
4133114
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2008736
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