Mechanism of resistivity decrease in networked-nanographite wires for multi-layer graphene interconnects

Author

Sato, Motonobu ; Ogawa, Shuichi ; Inukai, Manabu ; Ikenaga, Eiji ; Muro, Takayuki ; Takakuwa, Yuji ; Nihei, Mizuhisa ; Yokoyama, Naoki

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

We investigated the mechanism of resistivity decrease in networked-nanographite wires. The wires had no failure during over 200 hours under a current density of 5E5A/cm² at about 400°C. However, their resistivity decreased gradually owing to thermal stress. Raman and x-ray photoelectron spectroscopy revealed that the decrease in resistivity can be attributed to an increase in sp² bonding corresponding to the formation of a graphene sheet. It is important to clarify the mechanism for the decrease in resistivity, not only to improve thermal stability but also to obtain lower resistivity in carbon interconnects.

Keywords

Raman spectroscopy; electrical resistivity; integrated circuit interconnections; nanotechnology; thermal stability; wires (electric); Raman spectroscopy; X-ray photoelectron spectroscopy; carbon interconnects; graphene sheet; multilayer graphene interconnects; networked-nanographite wires; resistivity; thermal stability; thermal stress; Annealing; Artificial neural networks; Conductivity; Films; Plasma temperature; Temperature measurement; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940268

Filename

5940268