DocumentCode :
2008874
Title :
Carbon nanotube interconnects: Electrical characterization of 150 nm CNT contacts with Cu damascene top contact
Author :
Chiodarelli, Nicolò ; Van der Veen, Marleen H. ; Vereecke, Bart ; Cott, Daire J. ; Groeseneken, Guido ; Vereecken, Philippe M. ; Huyghebaert, Cedric ; Tokeï, Zsolt
Author_Institution :
imec, Leuven, Belgium
fYear :
2011
fDate :
8-12 May 2011
Firstpage :
1
Lastpage :
3
Abstract :
The integration of Carbon Nanotubes (CNT) in contact holes with TiN underlayer using CMOS compatible processes is discussed. Each process step was optimized by evaluating the electrical results obtained with contact test structures. Subsequently, this process was transferred to 150 nm diameter contact holes. We present the first electrical data obtained from automated probing of 150 nm diameter contacts filled with CNT connected by a Cu damascene top contact module. This constitutes a significant step forward towards the realization of CMOS contact modules with CNT interconnects.
Keywords :
CMOS integrated circuits; carbon nanotubes; electrical contacts; integrated circuit interconnections; CMOS compatible processes; CMOS contact modules; CNT contacts; CNT interconnects; Cu damascene top contact; TiN underlayer; carbon nanotube interconnects; contact holes; electrical characterization; size 150 nm; Aluminum oxide; CMOS integrated circuits; Contact resistance; Copper; Nickel; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
ISSN :
pending
Print_ISBN :
978-1-4577-0503-8
Type :
conf
DOI :
10.1109/IITC.2011.5940270
Filename :
5940270
Link To Document :
بازگشت