Carbon nanotube interconnects: Electrical characterization of 150 nm CNT contacts with Cu damascene top contact

Author

Chiodarelli, Nicolò ; Van der Veen, Marleen H. ; Vereecke, Bart ; Cott, Daire J. ; Groeseneken, Guido ; Vereecken, Philippe M. ; Huyghebaert, Cedric ; Tokeï, Zsolt

Author_Institution

imec, Leuven, Belgium

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

The integration of Carbon Nanotubes (CNT) in contact holes with TiN underlayer using CMOS compatible processes is discussed. Each process step was optimized by evaluating the electrical results obtained with contact test structures. Subsequently, this process was transferred to 150 nm diameter contact holes. We present the first electrical data obtained from automated probing of 150 nm diameter contacts filled with CNT connected by a Cu damascene top contact module. This constitutes a significant step forward towards the realization of CMOS contact modules with CNT interconnects.

Keywords

CMOS integrated circuits; carbon nanotubes; electrical contacts; integrated circuit interconnections; CMOS compatible processes; CMOS contact modules; CNT contacts; CNT interconnects; Cu damascene top contact; TiN underlayer; carbon nanotube interconnects; contact holes; electrical characterization; size 150 nm; Aluminum oxide; CMOS integrated circuits; Contact resistance; Copper; Nickel; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940270

Filename

5940270