Title : 
Thermoelectric transport in semiconductors-emergence of nonequilibrium charge carriers
         
        
            Author : 
Espejo, G. ; Meriuts, A. ; Titov, O.Yu. ; Logvinov, G.N. ; Volovich, I.N. ; Gurevich, Yu.G.
         
        
            Author_Institution : 
Dept. de Fisica, CINVESTAV-IPN, Mexico City, Mexico
         
        
        
            fDate : 
Aug. 29 1999-Sept. 2 1999
         
        
        
        
            Abstract : 
The new point of view of thermoelectric phenomena as a linear transport process of nonequilibrium charge carriers is presented. It is shown that Fermi quasilevels, which characterize transport in a system far from equilibrium can be nonmonotonic functions of the spatial coordinates. The role of recombination in affecting the thermoelectric phenomena is discussed for the first time. It is shown that in the presence of thermal fields there appear new terms in the expression for recombination which depend on the inhomogeneity of temperature. If electron and hole temperatures are different, which is a typical case in semiconductors, there appears one more new term in the expression for recombination which is proportional to the difference of electron and hole temperatures.
         
        
            Keywords : 
Fermi level; electron-hole recombination; thermoelectricity; Fermi quasilevels; electron temperature; hole temperature; linear transport process; nonequilibrium charge carriers; recombination; semiconductors; temperature inhomogeneity; thermoelectric transport; Charge carrier processes; Charge carriers; Circuits; Electric resistance; Instruments; Radiative recombination; Spontaneous emission; Temperature; Thermal resistance; Thermoelectricity;
         
        
        
        
            Conference_Titel : 
Thermoelectrics, 1999. Eighteenth International Conference on
         
        
            Conference_Location : 
Baltimore, MD, USA
         
        
        
            Print_ISBN : 
0-7803-5451-6
         
        
        
            DOI : 
10.1109/ICT.1999.843460