• DocumentCode
    2008892
  • Title

    Dark current of AlGaAs/GaAs n-QWIP prepared on patterned (001) GaAs substrate by MOVPE

  • Author

    Strichovanec, P. ; Kudela, R. ; Vavra, I. ; Srnánek, R. ; Novak, Jiri

  • Author_Institution
    Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    233
  • Lastpage
    236
  • Abstract
    A 400mum times 400mum sized square quantum-well infrared photodetector with 30 periods of the GaAs/Al0.3Ga0.7 As multiple quantum well has been prepared on patterned (001) GaAs substrate. The absorption spectrum at room temperature with normal incidence geometry is peaked at 9mum with a full width at half maximum (FWHM) of 3.7 mum. Dark current with influence of 300K background was measured at room temperature and at 77K
  • Keywords
    III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; (001) GaAs; 300 K; 77 K; AlGaAs-GaAs; MOVPE; absorption spectrum; dark current; metalorganic chemical vapor deposition; quantum-well infrared photodetector; Current measurement; Dark current; Electromagnetic wave absorption; Epitaxial growth; Epitaxial layers; Gallium arsenide; Geometry; Photodetectors; Quantum well devices; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
  • Conference_Location
    Smolenice Castle
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331196
  • Filename
    4133120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2008892