Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM

Author

Prezioso, M. ; Gombia, E. ; Mosca, R. ; Nasi, L. ; Motta, A. ; Frigeri, P. ; Trevisi, G. ; Seravalli, L. ; Franchi, S.

Author_Institution

IMEM Inst., C.N.R., Fontanini-Parma

fYear

2006

fDate

Oct. 2006

Firstpage

237

Lastpage

240

Abstract

The apparent C-V profiles and the deep levels in GaAs/InAs/GaAs quantum dot nanostructure, have been investigated by space charge spectroscopy techniques (C-V and DLTS). Accumulation peaks and/or depletion of free carriers at the QDs plane are observed under the considered growth parameters. It is shown that, both in the cap and at the QD-layer/cap interface, the deposition of lnAs QDs induces deep levels which exhibit a logarithmic dependence of the DLTS signal amplitude from the pulse width. transmission electron microscopy (TEM) analysis shows extended defects in the cap and near the QD/cap interface, which have been correlated to electrical measurement results

Keywords

III-V semiconductors; deep level transient spectroscopy; deep levels; defect states; gallium arsenide; indium compounds; semiconductor quantum dots; transmission electron microscopy; DLTS; active defects; deep level transient spectroscopy; electrical measurement; quantum dot nanostructure; space charge spectroscopy; transmission electron microscopy; Capacitance-voltage characteristics; Electric variables measurement; Gallium arsenide; Pulse measurements; Quantum dots; Signal analysis; Space charge; Space vector pulse width modulation; Spectroscopy; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

1-4244-0369-0

Type

conf

DOI

10.1109/ASDAM.2006.331197

Filename

4133121