Analysis of device geometry on the ruggedness of power DMOS transistor supported by 3-D modeling and simulation

Author

Vrbicky, Andrej ; Donoval, Daniel ; Marek, Juraj ; Chvala, Ales ; Beno, Peter

Author_Institution

Dept. of Microelectron., Slovak Univ. of Technol., Bratislava

fYear

2006

fDate

Oct. 2006

Firstpage

259

Lastpage

262

Abstract

The influence of geometrical dimensions on the properties of power DMOSFET´s has been studied by 3-D numerical modeling and simulation. The results of 3-D simulation provide a very effective way for the identification of failure mechanism and location of device hot-spots. The analysis of the influence of the geometry of one device cell including the position of ohmic contact to a p-type well on the turn-on of the parasitic bipolar transistor and corresponding device ruggedness is straightforward

Keywords

ohmic contacts; power MOSFET; power bipolar transistors; semiconductor device models; 3D modeling; 3D simulation; device geometry; device hot-spots; failure mechanism; ohmic contact; parasitic bipolar transistor; power DMOS transistor; Analytical models; Bipolar transistors; Doping profiles; Geometry; Numerical simulation; Ohmic contacts; Semiconductor process modeling; Solid modeling; Testing; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

1-4244-0369-0

Type

conf

DOI

10.1109/ASDAM.2006.331203

Filename

4133127