Title :
Millisecond annealing for salicide formation: Challenges of NiSi agglomeration free process
Author :
Gregoire, M. ; Beneyton, R. ; Morin, P.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
Replacing conventional low temperature second rapid thermal anneal by a high temperature millisecond anneal has been introduced in the last technology node in order to improve device performance or reduce leakage. Highest temperature induce highest performance boost however this induces the destructing NiSi agglomeration phenomena. The influence of dopant, Si microstructure and NiSi phase have been deeply investigated to evaluate the best process condition.
Keywords :
CMOS integrated circuits; annealing; nickel compounds; NiSi; agglomeration free process; millisecond annealing; salicide formation; Films; Nickel; Rapid thermal annealing; Silicides; Silicon; Substrates;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940280
