Title : 
Copper Interconnection with Tungsten Cladding for UlSI
         
        
            Author : 
Cho, J.S.H. ; Kang, H-K. ; Beiley, M.A. ; Wong, S. Simon
         
        
            Author_Institution : 
Stanford University, CA
         
        
        
        
        
        
            Keywords : 
Copper; Degradation; Dry etching; Electromigration; Integrated circuit interconnections; Metallization; Plugs; Temperature; Tungsten; Ultra large scale integration;
         
        
        
        
            Conference_Titel : 
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
         
        
            Conference_Location : 
Oiso, Japan
         
        
        
            DOI : 
10.1109/VLSIT.1991.705979