DocumentCode :
2009312
Title :
Crosstalk induced fault analysis in DRAMs
Author :
Mourad, S.
fYear :
2004
fDate :
12-15 Sept. 2004
Firstpage :
171
Lastpage :
172
Abstract :
In this paper we focus on the analysis of crosstalk among the bit-lines during the read operation, especially when defect and parameter variations exist. We identify such faults as crosstalk reading (CTR) faults. An analytical study of these faults was done and we supported the study with extensive simulation results.
Keywords :
DRAM chips; crosstalk; fault simulation; DRAM; RAM circuit; bit lines; crosstalk induced fault analysis; crosstalk reading faults; defect; parameter variations; read operation; simulation; Analytical models; Bismuth; Circuit faults; Crosstalk; Equivalent circuits; Integrated circuit interconnections; Integrated circuit noise; Latches; Random access memory; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOC Conference, 2004. Proceedings. IEEE International
Print_ISBN :
0-7803-8445-8
Type :
conf
DOI :
10.1109/SOCC.2004.1362395
Filename :
1362395
Link To Document :
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