Optimization of porous ultra low-κ dielectrics (κ ≤ 2.55) for 28nm generation

Author

Kioussis, D. ; Ryan, E.T. ; Madan, A. ; Klymko, N. ; Molis, S. ; Sun, Zhongyuan ; Masuda, Hiroji ; Liang, Shunlin ; Lee, T. ; Restaino, D. ; Clevenger, L. ; Quon, R. ; Augur, R. ; Child, C. ; Gates, S.M. ; Grill, A. ; Shobha, H. ; Sundlof, B. ; Shaw, T. ;

Author_Institution

GLOBALFOUNDRIES, Hopewell Junction, NY, USA

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

There is an ongoing need in the microelectronics industry to increase circuit density in multilevel back-end-of line (BEOL) interconnects to improve the operating speed and reduce power consumption. One way to maintain capacitance-resistance (RC) performance, without de grading yield or reliability is through introduction of porous ultra low-κ materials (ULK) as interlevel dielectrics (ILD). This paper presents the ability to tune ULK films through simple processing optimization steps to meet the specific integration requirements. Balancing composition of the film to minimize damage needs to be coupled with improving mechanical integrity for packing compatibility.

Keywords

integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; optimisation; circuit density; interlevel dielectrics; microelectronics industry; multilevel back-end-of line interconnects; optimization; porous ultra low-K dielectrics; power consumption; reliability; Adhesives; Carbon; Films; Metals; Optimization; Plasmas;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940304

Filename

5940304