Title :
In-situ study and modeling of the decreasing reaction rate at the end of CoSi2 formation
Author :
Delattre, R. ; Simola, R. ; Rivero, C. ; Serradeil, V. ; Perrin-Pellegrino, C. ; Thomas, O.
Author_Institution :
STMicroelectronics, Rousset, France
Abstract :
In-situ X-Ray diffraction was used to determine CoSi2 kinetics growth from 100 nm CoSi. In this work, we discuss about an unexpectedly slow reaction that is observed at the end of CoSi2 formation. A 1D model has also been developed from these experiments in order to reproduce the sequential growth of cobalt silicides and the end of the reaction experimentally observed in this study.
Keywords :
X-ray diffraction; cobalt compounds; semiconductor materials; CoSi2 formation; CoSi2 kinetics growth; CoSi2; cobalt silicides; in-situ X-ray diffraction; size 100 nm; Cobalt; Kinetic theory; Semiconductor device modeling; Silicidation; Silicides; Silicon; Tin;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940309
