DocumentCode :
2009843
Title :
Photo-imageable spin-on dielectrics for TSV 3D packaging applications
Author :
Zhang, Ruzhi Mike ; Lee, Chien-Hsien Sam ; Wolfer, Elizabeth ; Nagahara, Tatsuro
Author_Institution :
AZ Electron. Mater., Somerville, NJ, USA
fYear :
2011
fDate :
8-12 May 2011
Firstpage :
1
Lastpage :
3
Abstract :
Photo-imageable spin-on dielectrics (PSOD) with low dielectric constant were developed for TSV 3D packaging applications. Negative-tone PSOD with high resolution was devised to afford patterned dielectrics through simplified process, i.e. lithography and thermal annealing, in comparison to conventional CVD/Lithography/DRIE integration process. All processes employed in the PSOD fabrication are performed at low temperature (≤200°C) in order to meet the relatively low temperature constraints from conventional packaging materials.
Keywords :
annealing; chemical vapour deposition; dielectric materials; integrated circuit packaging; lithography; permittivity; sputter etching; three-dimensional integrated circuits; CVD; DRIE integration process; PSOD fabrication; TSV 3D packaging; dielectric constant; lithography; patterned dielectrics; photoimageable spin-on dielectrics; thermal annealing; Dielectrics; Lithography; Packaging; Silicon; Thermal stability; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
ISSN :
pending
Print_ISBN :
978-1-4577-0503-8
Type :
conf
DOI :
10.1109/IITC.2011.5940311
Filename :
5940311
Link To Document :
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