Surface modification of porous low-k material by plasma treatment and its application on reducing the damage from sputtering and CMP process

Author

Lu, Hai-Sheng ; Gottfried, Knut ; Ahner, Nicole ; Schulz, Stefan ; Qu, Xin-Ping

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

The influence of CH₄, H₂, NH₃ and He plasma on the properties of porous low-k material is studied. It is found that the H₂, He, NH₃ plasma can cause huge carbon depletion in the porous low-k material, and change the low-k surface from hydrophobic to hydrophilic, which will induce moisture uptake into the low-k material during the CMP process, and results in the increase of the k value and leakage current. The CH₄ plasma can make low-k material more resist against moisture uptake and keep the k value and leakage current of low-k films stable.

Keywords

chemical mechanical polishing; hydrophilicity; hydrophobicity; leakage currents; low-k dielectric thin films; plasma CVD; porous materials; sputter deposition; CMP process; SiCOH; leakage current; plasma treatment; porous low-k material; sputtering; surface modification; Films; Helium; Leakage current; Moisture; Plasmas; Slurries; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940315

Filename

5940315