DocumentCode
2009952
Title
Helium implanted silicon waveguide photodetectors for optical power monitors
Author
Liu, Y. ; Chow, C.W. ; Cheung, W.Y. ; Tsang, H.K.
Author_Institution
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
fYear
2006
fDate
5-10 March 2006
Abstract
The enhanced photo-response of helium ion implanted silicon waveguides as a function of different anneal temperatures and durations is reported. The enhancement in responsivity at communication wavelength was sufficient for use as optical power monitors.
Keywords
annealing; elemental semiconductors; helium; ion implantation; monitoring; optical communication equipment; optical waveguides; photodetectors; silicon; Si:He; annealing; helium implantation; optical power monitors; photodetectors; silicon waveguide; Annealing; Helium; Optical losses; Optical waveguides; Particle beam optics; Photoconductivity; Photodetectors; Photonic band gap; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Print_ISBN
1-55752-803-9
Type
conf
DOI
10.1109/OFC.2006.215562
Filename
1636593
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