• DocumentCode
    2010179
  • Title

    Improving plasma characteristic and depositing high-quality diamond film in surface wave plasma CVD

  • Author

    Kim, Jung-Ho ; Katsurai, Makoto

  • Author_Institution
    Univ. of Tokyo, Japan
  • fYear
    2003
  • fDate
    5-5 June 2003
  • Firstpage
    127
  • Abstract
    Summary form only given, as follows. By plasma chemical vapor deposition (CVD), a diamond film has been deposited in a hydrogen based plasma typically at a low pressure of several tens Torr. Recently, however, to deposit a large-area diamond film at a lower deposition temperature, a diamond film deposition at a lower pressure under 1 Torr has been attracting attentions. To deposit a high quality diamond at such a lower pressure, a plasma source with a high electron density, a low electron temperature, and a low plasma space potential has been demanded.
  • Keywords
    diamond; elemental semiconductors; plasma CVD; semiconductor growth; 0 to 1 torr; C; high-quality diamond film; plasma chemical vapor deposition; surface wave plasma CVD; Chemical vapor deposition; Electrons; Hydrogen; Plasma chemistry; Plasma density; Plasma properties; Plasma sources; Plasma temperature; Plasma waves; Surface waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
  • Conference_Location
    Jeju, South Korea
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-7911-X
  • Type

    conf

  • DOI
    10.1109/PLASMA.2003.1228544
  • Filename
    1228544