DocumentCode
2010179
Title
Improving plasma characteristic and depositing high-quality diamond film in surface wave plasma CVD
Author
Kim, Jung-Ho ; Katsurai, Makoto
Author_Institution
Univ. of Tokyo, Japan
fYear
2003
fDate
5-5 June 2003
Firstpage
127
Abstract
Summary form only given, as follows. By plasma chemical vapor deposition (CVD), a diamond film has been deposited in a hydrogen based plasma typically at a low pressure of several tens Torr. Recently, however, to deposit a large-area diamond film at a lower deposition temperature, a diamond film deposition at a lower pressure under 1 Torr has been attracting attentions. To deposit a high quality diamond at such a lower pressure, a plasma source with a high electron density, a low electron temperature, and a low plasma space potential has been demanded.
Keywords
diamond; elemental semiconductors; plasma CVD; semiconductor growth; 0 to 1 torr; C; high-quality diamond film; plasma chemical vapor deposition; surface wave plasma CVD; Chemical vapor deposition; Electrons; Hydrogen; Plasma chemistry; Plasma density; Plasma properties; Plasma sources; Plasma temperature; Plasma waves; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1228544
Filename
1228544
Link To Document