Title :
Dependence of trench charging on the velocity distribution of ions incident on a SiO/sub 2/ wafer
Author :
Yagisawa, T. ; Makabe, T.
Author_Institution :
Keio Univ., Yokohama, Japan
Abstract :
Summary form only given, as follows. As ULSI device dimensions have been scaled down, a number of issues have been raised during plasma etching. Especially, a charging damage during plasma etching is important issue to be addressed. We focus on the charging caused by the difference of the velocity distribution between electrons and positive ions incident on a SiO/sub 2/ wafer.
Keywords :
ULSI; integrated circuit modelling; silicon compounds; sputter etching; wafer-scale integration; Si; ULSI device dimensions; ion velocity distribution; plasma etching; trench charging; velocity distribution; wafer; Etching; Plasma accelerators; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma sheaths; Plasma sources; Plasma temperature; Ultra large scale integration;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1228545
