Title :
Dry etching of GaAs-based semiconductors in high-density planar inductively coupled BCl/sub 3/ plasmas
Author :
Lee, Jae W. ; Lim, W.T. ; Baek, I.G. ; Cho, G.S. ; Cho, K.S. ; Pearton, S.J.
Author_Institution :
Sch. of Nano Eng., Inje Univ., Gimhae, South Korea
Abstract :
Summary form only given, as follows. We investigated planar ICP etching of GaAs-based semiconductors including GaAs, AlGaAs and InGaP with BCl/sub 3/ gas chemistry.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; sputter etching; AlGaAs; BCl/sub 3/; GaAs; dry etching; gas chemistry; high-density planar inductively coupled plasmas; planar ICP etching; semiconductors; Dry etching; Fluid flow; Gallium arsenide; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma sources; Rough surfaces; Surface cleaning; Surface roughness;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1228549
