Title :
Copper electrochemical deposition in macroporous silicon arrays for through silicon via applications
Author :
Defforge, T. ; Coudron, L. ; Gautier, G. ; Grimal, V. ; Ventura, L. ; Van, F. Tran
Author_Institution :
Lab. de Microelectron. de Puissance, Univ. Francois Rabelais de Tours, Tours, France
Abstract :
The present paper deals with the realization of high conductivity through silicon via from macroporous silicon arrays. The pores were first etched by anodization into a hydrofluoric acid mixture. The high aspect ratio via were then filled by an optimized potentiostatic way involving a specific electrolyte with additives. The copper micro-wires were observed by SEM whereas XRD analysis enabled the determination of copper average grain size.
Keywords :
integrated circuit interconnections; SEM; XRD analysis; copper electrochemical deposition; copper microwires; high aspect ratio via; high conductivity through silicon via; hydrofluoric acid mixture; macroporous silicon arrays; Copper; Electrodes; Etching; Hafnium; Silicon; Through-silicon vias; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940336