Cu dry-fill on CVD Ru liner for advanced gap-fill and lower resistance

Author

Ishizaka, T. ; Gomi, A. ; Kato, T. ; Sakuma, T. ; Yokoyama, O. ; Yasumuro, C. ; Toshima, H. ; Mizusawa, Y. ; Hatano, T. ; Han, C.S. ; Hara, M.

Author_Institution

Tokyo Electron AT Ltd., Nirasaki, Japan

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

We describe Cu dry-fill on CVD Ru liner for advanced gap-fill and lower resistance for 22nm-node and beyond. Combination of Ru liner and iPVD Cu filling enables us to fill structures with enlarging Cu grains. Excellent step coverage and Cu wettability on Ru film allow Cu diffusion into trenches. 60% increase of grain size and 10% reduction of wiring resistivity were observed at 50nm-width trenches. We successfully fabricated low resistivity Cu interconnects with additional iPVD Cu planarization followed by CMP.

Keywords

chemical vapour deposition; copper; filling; ruthenium; wetting; wiring; CMP; CVD Ru liner; Cu; Cu diffusion; Cu dry-fill; Cu interconnects; Cu wettability; Ru; Ru film; advanced gap-fill; iPVD Cu filling; iPVD Cu planarization; size 22 nm; size 50 nm; Conductivity; Copper; Films; Grain size; Scattering; Surface treatment; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940338

Filename

5940338