Title :
Gate-Induced Drain Leakage in Ldd and Fully-Overlapped Ldd Mosfets
Author :
Parke, S. ; Moon, J. ; Nee, P. ; Huang, J. ; Hu, C. ; Ko, P.K.
Author_Institution :
Department of Electrical Engineering and Computer Sciences, University of California
Keywords :
Analytical models; Application software; Data mining; Doping profiles; Ice; MOSFETs; Moon; Random access memory; Semiconductor process modeling; Tunneling;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705984
