The development of low frequency RF generator for dry scrubber

Summary form only given, as follows. Chemical vapor deposition reactors are widely used in the semiconductor industry for making insulating, semiconductive and conducting films in wafer fabrication. Dry scrubber system is to treat exhaust gases in semiconductor processing. Plasma is generated inside the electrode where the surface area to the plasma volume ration is high and the flow path is long. When process exhaust gases enter the dry scrubber system, they are forced to pass through the plasma region where energized electrons and ions collide with gas molecules and particles, generating reactive species, which react on expanded electrode surfaces. Solid components and particles are deposited on the electrode surfaces as dense films without reaction on the flow path and neutralized gases are pumped downstream. In this paper, we have studied on the low frequency RF generator for dry scrubber system. The main power stage of low frequency RF generator is used for the FB PWM inverter with an LC filter in the secondary circuit of the transformer. The operation of the Low frequency RF generator is identified. For this, we divided a switching period into six topological modes. 1500kW, 100kHz Low Frequency RF generator is designed and tested. Also, manual matching transformer provides an impedance match for any given process related variation in impedance. The operation characteristics of low frequency RF generator are verified by simulation and experimental results.