AUSN solder vacuum packaging using melted solder floodgates and laser-activated non-evaporable getters for SIC diaphragm anticorrosive vacuum sensors

Author

Tanaka, Shuji ; Honjoya, Yutaka ; Esashi, Masayoshi

Author_Institution

Dept. of Nanomech., Tohoku Univ., Sendai, Japan

fYear

2010

fDate

24-28 Jan. 2010

Firstpage

492

Lastpage

495

Abstract

Versatile wafer-level vacuum packaging technology using screen-printed AuSn eutectic solder was developed and applied to a SiC diaphragm anticorrosive vacuum sensor. Thin film Ti/SiO₂ Â¿floodgatesÂ¿ were used to prevent melted AuSn solder from flowing into microstructures, e.g. capacitive gaps. After vacuum packaging, a non-evaporable getter (NEG), which chemically absorbs residual gas, was activated by Nd:YAG laser. In comparison to other wafer-level vacuum packaging technologies, the developed one establishes electrical connections and feedthroughs simultaneously, and is tolerant to surface roughness, surface contamination and wafer waviness.

Keywords

electronics packaging; getters; gold compounds; micromechanical devices; silicon compounds; solders; surface roughness; AUSN solder vacuum packaging; AuSn; SiC; SiC diaphragm anticorrosive vacuum sensor; Ti-SiO₂; laser-activated nonevaporable getter; melted solder floodgate; screen-printed AuSn eutectic solder; surface contamination; surface roughness; thin film; wafer waviness; wafer-level vacuum packaging technology; Chemical lasers; Chemical technology; Gettering; Packaging; Rough surfaces; Silicon carbide; Surface contamination; Surface roughness; Vacuum technology; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on

Conference_Location

Wanchai, Hong Kong

ISSN

1084-6999

Print_ISBN

978-1-4244-5761-8

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2010.5442459

Filename

5442459