Analysis of heating mechanisms in capacitively-coupled plasma using PIC simulation

Summary form only given, as follows. Recently, dual-frequency capacitively coupled plasma (CCP) has been of much interest as the mainstream plasma source for dielectric etchers. Although, in the last decade, a wide range of models has helped us to understand a conventional CCP source, there has not been many modeling and simulation of a dual-frequency CCP source. Power dissipation mode transitions in dual-frequency CCP have been analyzed using a modified one-dimensional electrostatic particle-in-cell/Monte Carlo (PIC/MC) code. Varying the driving frequency and current, the spatial profiles of the absorbed powers by electrons and ions were compared separately. These results were also compared with simple analytic theory for dual-frequency RF sheath. Furthermore, the pulsed-RF discharge has been also analyzed using PIC simulation. Depending on the duty ratio, the power mode transition was observed. We also found that the ion energy and flux can be controlled independently by varying the magnitude and the duty ratio of the driving current.