Title :
High temperature thermoelectric properties of Czochralski-pulled Ba8Ga16Ge30
Author :
Christensen, M. ; Snyder, G.Jeffrey ; Iversen, B.B.
Author_Institution :
Dept. of Chem., Univ. of Aarhus
Abstract :
High temperature thermoelectric properties have been measured on a Czochralski pulled Ba8Ga16Ge30 crystal. Complete transport properties obtained in the temperature range from 273K to 1150K. The physical properties are reproducible even after thermal cycling. The Seebeck coefficient reveals the sample to be an n-type conductor with a maximum value of -148 muV/K at 1073K. The electrical resistivity shows the characteristics of a heavily doped semi conductor, and it goes through a maximum at 1073 K with a value of 1.7 mOmega-cm. The thermal conductivity goes through a minimum of 1.25 W/m-K around 900K, and ZT reaches a maximum of 0.9 at 1000 K
Keywords :
Seebeck effect; barium compounds; crystal growth from melt; electrical resistivity; gallium compounds; germanium compounds; thermal conductivity; 273 to 1150 K; Ba8Ga16Ge30; Czochralski-pulled crystal; Seebeck coefficient; electrical resistivity; heavily doped semiconductor; high temperature thermoelectric property; n-type conductor; thermal conductivity; thermal cycling; transport property; Atomic measurements; Barium; Conductors; Furnaces; Materials science and technology; Shape measurement; Temperature; Thermal conductivity; Thermoelectricity; Weapons;
Conference_Titel :
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location :
Vienna
Print_ISBN :
1-4244-0811-3
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2006.331265
