Title :
Evaluation of piezoresistace coefficients of silico first-priciples band structures
Author :
Nakamura, Koichi ; Toriyama, Toshiyuki ; Sugiyama, Susumu
Author_Institution :
Ritsumeikan Univ., Kusatsu, Japan
Abstract :
We have simulated piezoresistance coefficients in single-crystal hydrogen-terminated silicon nanosheets with (001) surface orientation on the basis of first-principles calculations of model structures. The [110] uniaxial tensile stress causes band deformation, and a drastic change of conductivity can be observed for nanosheet models. We have obtained high piezoresistance coefficients for p-type nanosheet of about 1 nm thickness, ¿l[110] = 174 × 10-11 Pa-1, and ¿t[110] = -139 × 10-11 Pa-1. It is expected that p-type ultra-thin Si(001) nanosheet will be a suitable candidates for nanoscale piezoresistors due to its giant piezoresistivity.
Keywords :
ab initio calculations; band structure; crystal orientation; deformation; elemental semiconductors; piezoresistance; silicon; tensile strength; Si; band deformation; band structures; first principles calculations; giant piezoresistivity; nanosheets; p-type ultra-thin nanosheet; piezoresistance coefficients; single-crystal hydrogen-terminated silicon; surface orientation; uniaxial tensile stress; Conducting materials; Conductivity; Nanowires; Photonic band gap; Piezoresistance; Piezoresistive devices; Silicon; Temperature; Tensile strain; Tensile stress;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location :
Wanchai, Hong Kong
Print_ISBN :
978-1-4244-5761-8
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2010.5442473
