• DocumentCode
    2012027
  • Title

    A bipolar smart power technology for high voltage applications

  • Author

    Denner, V. ; Flohrs, P. ; Michel, H.

  • Author_Institution
    Robert Bosch GmbH, Reutlingen, West Germany
  • fYear
    1989
  • fDate
    28-29 Aug 1989
  • Firstpage
    27
  • Lastpage
    29
  • Abstract
    A technology is discussed which allows integration of n-p-n and p-n-p transistors with a multistage Darlington output designed for voltages up to UCBO=600 V. With this technology, circuit functions like temperature-compensated current regulation and internal voltage clamping can be realized. A special MOS voltage clamping can be realized. A special MOS arrangement is employed to accomplish the voltage clamping and to enhance the reliability of the device. A survey of this smart power technology is given, and a demonstration example is shown
  • Keywords
    bipolar integrated circuits; power integrated circuits; MOS voltage clamping; bipolar smart power technology; multistage Darlington output; reliability; temperature-compensated current regulation; Clamps; Current control; Electrodes; Ignition; Integrated circuit technology; Power electronics; Power transistors; Space technology; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Automotive Power Electronics, 1989
  • Conference_Location
    Dearborn, MI
  • Type

    conf

  • DOI
    10.1109/APE.1989.97150
  • Filename
    97150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2012027