Title :
Future silicon technology
Author_Institution :
SAIT, Samsung Electron. Co., Yongin, South Korea
Abstract :
Dimensional scaling will continue in Si CMOS technology which will extend to beyond 10nm. Key challenges for dimensional scaling and expansion of silicon-based technologies as well as research directions will be reviewed in traditional semiconductor applications such as DRAM, NAND Flash, logic as well as advanced devices including STT-MRAM, ReRAM and reconfigurable logic. Furthermore, other areas where Si technologies play import roles will be presented including power electronics, solid-state lighting as well as DNA sequencing and medical imaging.
Keywords :
CMOS integrated circuits; NAND circuits; flash memories; power electronics; random-access storage; CMOS technology; DNA sequencing; DRAM; NAND flash; ReRAM; STT-MRAM; Si technologies; dimensional scaling; future silicon technology; medical imaging; power electronics; reconfigurable logic; semiconductor applications; silicon-based technologies; solid-state lighting; Gallium nitride; Logic gates; Optical interconnections; Random access memory; Silicon; Transistors;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343322
