DocumentCode :
2012280
Title :
Towards data reliable crossbar-based memristive memories
Author :
Ghofrani, Amirali ; Lastras-Montano, Miguel Angel ; Kwang-Ting Cheng
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
fYear :
2013
fDate :
6-13 Sept. 2013
Firstpage :
1
Lastpage :
10
Abstract :
A series of breakthroughs in memristive devices have demonstrated the potential of using crossbar-based memristor arrays as ultra-high-density and low-power memory. However, their unique device characteristics could cause data disturbance for both read and write operations resulting in serious data reliability problems. This paper discusses such reliability issues in detail and proposes a comprehensive yet low area-/performance-/energy-overhead solution addressing these problems. The proposed solution applies asymmetric voltages for disturbance confinement, inserts redundancy for disturbance detection, and employs a refreshing mechanism to restore weakened data. The results of a case study show that the average overheads of area, performance and energy consumption for achieving data reliability, over a baseline unreliable memory system, are 3%, 4%, and 19% respectively.
Keywords :
integrated circuit reliability; low-power electronics; memristors; storage management chips; asymmetric voltages; crossbar-based memristor arrays; data reliability; data reliability problems; data reliable crossbar-based memristive memories; device characteristics; disturbance confinement; disturbance detection; energy consumption; low-power memory; ultrahigh-density; Arrays; Integrated circuit reliability; Memristors; Resistance; Transistors; Voltage measurement; Crossbar; Memristor; Nonvolatile; ReRAM; Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference (ITC), 2013 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1089-3539
Type :
conf
DOI :
10.1109/TEST.2013.6651928
Filename :
6651928
Link To Document :
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