DocumentCode
2012294
Title
An Ultra-High Emitter Efficiency Transistor with a Low-Temperature Processed Polysilicon Emitter for High-Speed Bipolar Ulsis
Author
Kondo, M. ; Namba, M. ; Kobayashi, T. ; Iijima, S. ; Nakamura, T.
Author_Institution
Central Research Laboratory, Tokyo
fYear
1991
fDate
28-30 May 1991
Firstpage
65
Lastpage
66
Keywords
Amorphous silicon; Annealing; Bipolar transistors; Boron; Furnaces; Laboratories; Semiconductor films; Testing; Thermal resistance; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location
Oiso, Japan
Type
conf
DOI
10.1109/VLSIT.1991.705992
Filename
705992
Link To Document