DocumentCode
2012295
Title
Homologous rare earth boron cluster compounds: a possible n-type counterpart to boron carbide
Author
Mori, Takao ; Nishimura, Toshiyuki
Author_Institution
National Inst. for Mater. Sci., Tsukuba
fYear
2006
fDate
6-10 Aug. 2006
Firstpage
164
Lastpage
167
Abstract
There is a large incentive to discover/develop thermoelectric materials which can function at high temperature. Boron-rich cluster compounds are attractive as materials because of their stability under high temperature and "unfriendly" (e.g. acidic, corrosive) conditions. We have discovered that a homologous series of newly found layered rare earth B12 icosahedra compounds, exhibit both p-type and n-type behavior depending on the number of boron icosahedra layers. This is the first discovery of a B12 icosahedra compound exhibiting n-type behavior without extreme doping and is exciting because it may be a possible counterpart to the p-type boron carbide which is well known to be an attractive high temperature thermoelectric material. The first samples were prepared by conventional hot press and cold press methods and were not so dense. Utilizing spark plasma synthesis (SPS) we have been able to prepare samples with significantly improved properties
Keywords
atomic clusters; boron compounds; cold working; doping; hot pressing; rare earth compounds; thermoelectricity; B12; boron carbide; boron icosahedra compound; boron-rich cluster; cold press; doping; hot press; n-type behavior; p-type behavior; rare earth boron cluster compound; spark plasma synthesis; thermoelectric materials; Boron; Magnetic materials; Magnetic semiconductors; Plasma density; Plasma properties; Plasma temperature; Sparks; Stability; Thermal conductivity; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location
Vienna
ISSN
1094-2734
Print_ISBN
1-4244-0811-3
Electronic_ISBN
1094-2734
Type
conf
DOI
10.1109/ICT.2006.331324
Filename
4133262
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