Title :
A 26ps Selective Epitaxial Bipolar Technology
Author :
Meister, T.F. ; Meul, H.W. ; Stengl, R. ; Hartwig, D. ; Weyl, R. ; Kerner, I. ; Mahnkopf, R. ; Schreiter, R. ; Weng, J. ; Kopl, R.
Author_Institution :
Siemens AG, Corporate Research and Development, Munchen
Keywords :
Bipolar transistors; Capacitance; Circuits; Contacts; Doping profiles; Electric breakdown; Electric resistance; Epitaxial growth; Fabrication; Temperature;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705993
