• DocumentCode
    2012412
  • Title

    Profile Design Issues and Optimization of Epitaxial Si and SiGe-Base Bipolar Transistors and Circuits for 77K Applications

  • Author

    Cressler, J.D. ; Comfort, J.H. ; Crabbe, E.F. ; Patton, G.L. ; Stork, J.M.C. ; Sun, L.Y.-C. ; Meyerson, B.S.

  • Author_Institution
    IBM Thomas J. Watson Research Center, NY
  • fYear
    1991
  • fDate
    28-30 May 1991
  • Firstpage
    69
  • Lastpage
    70
  • Keywords
    Bipolar transistors; Circuits; Current density; Degradation; Delay; Design optimization; Germanium silicon alloys; Photonic band gap; Silicon germanium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1991.705994
  • Filename
    705994
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2012412