Title :
Profile Design Issues and Optimization of Epitaxial Si and SiGe-Base Bipolar Transistors and Circuits for 77K Applications
Author :
Cressler, J.D. ; Comfort, J.H. ; Crabbe, E.F. ; Patton, G.L. ; Stork, J.M.C. ; Sun, L.Y.-C. ; Meyerson, B.S.
Author_Institution :
IBM Thomas J. Watson Research Center, NY
Keywords :
Bipolar transistors; Circuits; Current density; Degradation; Delay; Design optimization; Germanium silicon alloys; Photonic band gap; Silicon germanium; Temperature;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705994
