Geometry based resistance model for phase change memory

Author

Kwong, K.C. ; Mok, Philip K T ; Chan, Mansun

Author_Institution

Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

101

Lastpage

104

Abstract

A phase change memory resistance model accounting for the geometry of SET and RESET state is developed. The resistance of the memory cell with different dimensions and boundary conditions is solved using conformal mapping including the current crowding effect. When combining with a proper thermal heating model, the read resistance at different degree of crystallization can be predicted, which is important for multi-bit storage simulation. The model has been verified by numerical simulation with different cell geometry and programming current magnitude. The model calculation result is verified by the numerical simulation.

Keywords

phase change memories; RESET state; cell geometry; conformal mapping; crystallization; current crowding effect; geometry based resistance model; memory cell; multibit storage simulation; phase change memory resistance model; programming current magnitude; thermal heating model; Conformal mapping; Electrodes; Mathematical model; Numerical models; Phase change materials; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European

Conference_Location

Bordeaux

ISSN

1930-8876

Print_ISBN

978-1-4673-1707-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2012.6343343

Filename

6343343