Integrated reactor and feature scale analysis of plasma enhanced semiconductor fabrication processes

Summary form only given, as follows. We will present an integrated analysis of the effects of reactor design and process conditions on the resulting feature topography during a plasma-enhanced deposition process. We discuss the effects of reactor design, operating conditions, and underlying physical and chemical processes on both the wafer scale uniformity and feature scale topography. An example of such an analysis is shown which shows the evolution of the film surface during the filling of a trench by a high-density plasma deposition process. The process model includes sputtering of the deposited film by energetic ions with an angular dependent sputter yield, resulting in a complete fill of the trench and faceting of the film above the original substrate surface.