• DocumentCode
    2012642
  • Title

    A novel fatigue test with ramping stress amplitude to evaluate fatigue behavior of polysilicon thin films

  • Author

    Le Huy, Vu ; Gaspar, Joao ; Paul, Oliver ; Kamiya, Shoji

  • Author_Institution
    Nagoya Inst. of Technol., Nagoya, Japan
  • fYear
    2010
  • fDate
    24-28 Jan. 2010
  • Firstpage
    220
  • Lastpage
    223
  • Abstract
    This paper presents a new experimental method to estimate the fatigue behavior of polysilicon thin films by using cyclic loading with gradually increasing stress amplitude. This method solves fundamental problems of conventional fatigue experiments with constant amplitude. The fatigue crack extension process determining fatigue lifetime was estimated by the well-known Paris law with two unknown parameters. These were fit to the results of two methods performed on specimens with two different situations of etching damage. It is shown that the new experimental method can be used to predict the fatigue lifetime in a more efficient manner.
  • Keywords
    elemental semiconductors; fatigue cracks; fatigue testing; semiconductor thin films; silicon; Paris law; Si; cyclic loading; fatigue behavior; fatigue crack; fatigue lifetime; fatigue test; polysilicon thin films; ramping stress amplitude; Amplitude estimation; Degradation; Etching; Fatigue; Life estimation; Life testing; Lifetime estimation; Micromechanical devices; Tensile stress; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
  • Conference_Location
    Wanchai, Hong Kong
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-5761-8
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2010.5442527
  • Filename
    5442527