DocumentCode
2012642
Title
A novel fatigue test with ramping stress amplitude to evaluate fatigue behavior of polysilicon thin films
Author
Le Huy, Vu ; Gaspar, Joao ; Paul, Oliver ; Kamiya, Shoji
Author_Institution
Nagoya Inst. of Technol., Nagoya, Japan
fYear
2010
fDate
24-28 Jan. 2010
Firstpage
220
Lastpage
223
Abstract
This paper presents a new experimental method to estimate the fatigue behavior of polysilicon thin films by using cyclic loading with gradually increasing stress amplitude. This method solves fundamental problems of conventional fatigue experiments with constant amplitude. The fatigue crack extension process determining fatigue lifetime was estimated by the well-known Paris law with two unknown parameters. These were fit to the results of two methods performed on specimens with two different situations of etching damage. It is shown that the new experimental method can be used to predict the fatigue lifetime in a more efficient manner.
Keywords
elemental semiconductors; fatigue cracks; fatigue testing; semiconductor thin films; silicon; Paris law; Si; cyclic loading; fatigue behavior; fatigue crack; fatigue lifetime; fatigue test; polysilicon thin films; ramping stress amplitude; Amplitude estimation; Degradation; Etching; Fatigue; Life estimation; Life testing; Lifetime estimation; Micromechanical devices; Tensile stress; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location
Wanchai, Hong Kong
ISSN
1084-6999
Print_ISBN
978-1-4244-5761-8
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2010.5442527
Filename
5442527
Link To Document