DocumentCode
2012793
Title
Manufacturing aspects of an ultra-thin chip technology
Author
Angelopoulos, Evangelos A. ; Al-Shahed, Muhammad S. ; Appel, Wolfgang ; Endler, Stefan ; Ferwana, Saleh ; Harendt, Christine ; Hassan, Mahadi-Ul ; Rempp, Horst ; Zimmermann, Martin ; Burghartz, Joachim N.
Author_Institution
Inst. for Microelectron. Stuttgart (IMS CHIPS), Stuttgart, Germany
fYear
2012
fDate
17-21 Sept. 2012
Firstpage
141
Lastpage
144
Abstract
Ultra-thin silicon (Si) chips fabricated using the recently developed Chipfilm™ technology feature three distinct manufacturing issues, which are discussed in this paper. In Chipfilm™ technology a thin Si membrane is firmly attached to a conventional bulk Si wafer by vertical Si micro-anchors which, however, in the end are controllably fractured to make the thin chips detachable. The associated mechanical stability window is widened by adjusting the arrangement of the micro-anchors, so that chip detachment yields exceeding 99% are achieved. Another not yet reported issue relates to the process temperature and temperature uniformity within the membrane areas, which are thermally connected to the bulk substrate only by the anchors and at the chip edges during processing. Using rapid thermal oxidation and the local oxide thickness as a temperature monitor an on-chip oxide thickness variation of ±3% is determined. Finally, the inherent deformation (warpage) of free-standing ultra-thin chips due to internal stresses is analyzed and their surface height variation is reduced to only ±4 μm using stress compensation techniques.
Keywords
deformation; internal stresses; mechanical stability; three-dimensional integrated circuits; chip detachment; inherent deformation; internal stresses; manufacturing aspects; mechanical stability window; microanchors; on-chip oxide thickness variation; rapid thermal oxidation; stress compensation technique; surface height variation; ultra thin silicon chip technology; Metals; Rapid thermal processing; Silicon; Strain; Stress; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location
Bordeaux
ISSN
1930-8876
Print_ISBN
978-1-4673-1707-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2012.6343353
Filename
6343353
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