• DocumentCode
    2012793
  • Title

    Manufacturing aspects of an ultra-thin chip technology

  • Author

    Angelopoulos, Evangelos A. ; Al-Shahed, Muhammad S. ; Appel, Wolfgang ; Endler, Stefan ; Ferwana, Saleh ; Harendt, Christine ; Hassan, Mahadi-Ul ; Rempp, Horst ; Zimmermann, Martin ; Burghartz, Joachim N.

  • Author_Institution
    Inst. for Microelectron. Stuttgart (IMS CHIPS), Stuttgart, Germany
  • fYear
    2012
  • fDate
    17-21 Sept. 2012
  • Firstpage
    141
  • Lastpage
    144
  • Abstract
    Ultra-thin silicon (Si) chips fabricated using the recently developed Chipfilm™ technology feature three distinct manufacturing issues, which are discussed in this paper. In Chipfilm™ technology a thin Si membrane is firmly attached to a conventional bulk Si wafer by vertical Si micro-anchors which, however, in the end are controllably fractured to make the thin chips detachable. The associated mechanical stability window is widened by adjusting the arrangement of the micro-anchors, so that chip detachment yields exceeding 99% are achieved. Another not yet reported issue relates to the process temperature and temperature uniformity within the membrane areas, which are thermally connected to the bulk substrate only by the anchors and at the chip edges during processing. Using rapid thermal oxidation and the local oxide thickness as a temperature monitor an on-chip oxide thickness variation of ±3% is determined. Finally, the inherent deformation (warpage) of free-standing ultra-thin chips due to internal stresses is analyzed and their surface height variation is reduced to only ±4 μm using stress compensation techniques.
  • Keywords
    deformation; internal stresses; mechanical stability; three-dimensional integrated circuits; chip detachment; inherent deformation; internal stresses; manufacturing aspects; mechanical stability window; microanchors; on-chip oxide thickness variation; rapid thermal oxidation; stress compensation technique; surface height variation; ultra thin silicon chip technology; Metals; Rapid thermal processing; Silicon; Strain; Stress; Substrates; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
  • Conference_Location
    Bordeaux
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-1707-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2012.6343353
  • Filename
    6343353