Title :
A Poly-Buffered Face Technology for High Density Flash Memories
Author :
Woo, B.J. ; Ong, T.C. ; Lai, S.
Author_Institution :
Intel Corporation, CA
Keywords :
Beak; Channel hot electron injection; EPROM; Grain size; Implants; Nonvolatile memory; Oxidation; Scalability; Threshold voltage; Tunneling;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705996
