Current-voltage characteristics of vertical diodes for next generation memories

Author

An, Hokyun ; Lee, Kong-Soo ; Kang, Yoongoo ; Jeong, Seonghoon ; Yoo, Wonseok ; Han, Jae-Jong ; Kim, Bonghyun ; Lim, Hanjin ; Nam, Seokwoo ; Jeong, Gi-Tae ; Kang, Ho-Kyu ; Chung, Chilhee ; Choi, Byoungdeog

Author_Institution

Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

149

Lastpage

152

Abstract

In this paper, current-voltage-temperature (I-V-T) characteristics of vertical diodes realized by different selective epitaxial growth techniques have been investigated. Diodes by the batch-type cyclic SEG process at low temperature have shown eligible performances for vertical switches, including ideality factor of 1.08, off-current of 1.0×10^-12 A and on/off-ratio of 2.4×10⁸. The optimization of crystallographic defects and series resistance is expected to be the most critical for the performances of vertical diodes for next generation memories.

Keywords

epitaxial growth; random-access storage; semiconductor device models; semiconductor diodes; batch-type cyclic SEG process; crystallographic defect; current-voltage-temperature characteristic; diode ideality factor; next generation memories; selective epitaxial growth technique; series resistance; vertical diode; vertical switches; Epitaxial growth; Performance evaluation; Resistance; Semiconductor diodes; Silicon; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European

Conference_Location

Bordeaux

ISSN

1930-8876

Print_ISBN

978-1-4673-1707-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2012.6343355

Filename

6343355