A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts

We demonstrated In_0.53Ga_0.47As channel FinFETs with self-aligned Molybdenum (Mo) contacts for the first time. By using self-aligned Mo contacts formed on in-situ doped n⁺⁺ In_0.53Ga_0.47As source and drain, series resistance of ~250 Ω·μm was achieved, which is the lowest value ever reported for In_0.53Ga_0.47As non-planar devices. A gate-last process was used. FinFET with channel length of 500 nm and EOT of 3 nm has an I_ON/I_OFF of over 10⁵ and peak G_m of 255 μS/μm at V_D = 0.5 V.