New parameter extraction method based on split C-V for FDSOI MOSFETs

A new parameter extraction methodology based on split C-V is proposed for FDSOI MOS devices. To this end, a detailed capacitance theoretical analysis is first conducted emphasizing the usefulness of the Maserjian function. Split C-V measurements carried out on various FDSOI CMOS technologies show that the Maserjian function exhibits a power law dependence with inversion charge as ∝ Qi^-2 whatever the carrier type and gate oxide thickness. This feature enables to confirm the validity of a two-parameter simple capacitance model and allows reliable MOSFET parameter extraction.